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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1850 DESCRIPTION *High Voltage *High Switching Speed *Wide Area of Safe Operation APPLICATIONS *Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCES Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w ww scs .i 1500 1500 700 7 7 20 3 V V V .cn mi e V A ICP Collector Current-Peak A IB B Base Current- Continuous Collector Power Dissipation @Ta=25 A 3 W PC Collector Power Dissipation @TC=25 Tj Junction Temperature 120 150 Tstg Storage Temperature Range -55-150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)EBO VCE(sat) VBE(sat) hFE-1 hFE-2 PARAMETER Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain DC Current Gain CONDITIONS IE= 1mA; IC= 0 IC= 6A; IB= 1.5A B 2SD1850 MIN 7 TYP MAX UNIT V 8.0 1.5 5 4.5 25 V V IC= 6A; IB= 1.5A B IC= 1A; VCE= 5V IC= 6A; VCE= 5V VCB= 1000V; IE= 0 ICBO Collector Cutoff Current fT Transition Frequency Switching Times, Resistive Load ts tf Storage Time Fall Time w w. w sem isc VCB= 1500V; IE= 0 IC= 1A; VCE= 10V IC= 6A; IB1= 1.5A; IB2= -3A, VCC= 200V .cn i 10 1.0 2 A mA MHz 1.5 0.2 s s isc Websitewww.iscsemi.cn |
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